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2004, 2007 description the ne55410gr is an n-channel enhancement-mode ldmos fet designed for driver 0.1 to 2.6 ghz pa, such as, cellular base station amplifier, analog/digital tv-transmitters, and the other pas. this product has two different fet's on one die manufactured using our newmos technology (our wsi gate lateral mos fet), and its nitride surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability. features ? two different fets (q1 : p out = 2 w, q2 : p out = 10 w) in one package ? over 25 db gain available by connecting two fets in series g : l(q1) = 13.5 db typ. (v ds = 28 v, i dset (q1) = 20 ma, f = 2 140 mhz) g : l(q2) = 11.0 db typ. (v ds = 28 v, i dset (q2) = 100 ma, f = 2 140 mhz) ? high 1 db compression output power : p o (1 db) (q1) = 35.4 dbm typ. (v ds =28v,i dset (q1) = 20 ma, f = 2 140 mhz) p : o (1 db) (q2) = 40.4 dbm typ. (v ds =28v,i dset (q2) = 100 ma, f = 2 140 mhz) ? high drain efficiency : d d(q1) = 52% typ. (v ds =28v,i dset (q1) = 20 ma, f = 2 140 mhz) : d d(q2) = 46% typ. (v ds =28v,i dset (q2) = 100 ma, f = 2 140 mhz) ? low intermodulation distortion : im 3(q1) = < 40 dbc typ. (v ds =28v,i dset (q1+q2) = 120 ma, p , z h m 5 . 7 4 1 2 / 5 . 2 3 1 2 = f out = 33 dbm (2 tones) ) ? single supply (v ds :3v v ds ) 32 v) ? excellent thermal stability ? surface mount type and super low cost plastic package : 16-pin plastic htssop ? integrated esd protection ? excellent stability against hci (hot carrier injection) application ? digital cellular base station pa : w-cdma/gsm/d-amps/n-cdma/pcs etc. ? uhf-band tv transmitter pa the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. data sheet caution observe precautions when handling because these devices are sensitive to electrostatic discharge. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. ldmos field effect transistor ne55410gr n-channel silicon power ldmos fet for 2 w + 10 w vhf to l-band single-end power amplifier document no. pu10542ej03v0ds (3rd edition) date published january 2007 ns cp(n)
ordering information part number order number package marking supplying form ne55410gr ne55410gr-t3-az 16-pin plastic htssop (pb-free) note 55410 % embossed tape 12 mm wide % pin 1 and 8 indicates pull-out direction of tape % qty 1 kpcs/reel note with regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. remark to order evaluation samples, contact your nearby sales office. part number for sample order: ne55410gr pin connections and internal block diagram pin no. pin name pin no. pin name 1 source 9 source 2 drain (q2) 10 gate (q1) 3 drain (q2) 11 source 4 drain (q2) 12 drain (q1) 5 drain (q2) 13 source 6 source 14 gate (q2) 7 gate (q1) 15 gate (q2) 8 source 16 source 9 10 11 12 13 14 15 16 8 (top view) 7 6 5 4 3 2 1 q1 q2 s s s s s s s s s s s remark all the terminals of a q2 connected to a circuit. backside : source ( s ) absolute maximum ratings (t a =+25 $ c, unless otherwise specified) t i n u s g n i t a r s n o i t i d n o c t s e t l o b m y s r e t e m a r a p drain to source voltage v ds v 5 6 gate to source voltage v gs ( 7v drain current (q1) i d (q1) a 5 2 . 0 drain current (q2) i d (q2) a 0 . 1 total device dissipation (t case =25 $ c) p tot w 0 4 p ) 1 q ( r e w o p t u p n i in (q1) f = 2.14 ghz, v ds w 3 . 0 v 8 2 = p ) 2 q ( r e w o p t u p n i in (q2) f = 2.14 ghz, v ds w 5 . 1 v 8 2 = channel temperature t ch 0 5 1 $ c storage temperature t stg < 65 to +150 $ c data sheet pu10542ej03v0ds 2 ne55410gr
thermal resistance (t a =+25 $ c) parameter symbol test conditions min. typ. max. unit channel to case resistance r th (ch-c) < 2.5 3.0 $ c/w recommended operating conditions (t a =+25 $ c) parameter symbol min. typ. max. unit drain to source voltage v ds < 28 32 v gate to source voltage v gs 2.7 3.3 3.7 v input power (q1), cw p in (q1) < 15 23 dbm input power (q2), cw p in (q2) < 20 30 dbm average output power (q1), cw note p o (ave.) (q1) << 24 dbm average output power (q2), cw note p o (ave.) (q2) << 30 dbm note when mounting on the pwb that our company recommends. electrical characteristics (t a =+25 $ c) parameter symbol test conditions min. typ. max. unit 1 q gate to source leak current i gss (q1) v gss =5v << 1 + a drain to source leakage current i dss (q1) v dss =65v << 1ma gate threshold voltage v th (q1) v ds = 10 v, i ds = 1 ma 2.2 2.8 3.4 v transconductance g m(q1) v ds = 28 v, i ds =20ma < 0.09 < s drain to source breakdown voltage bv dss (q1) i dss =10 + 5 7 5 6 a < v 2 q gate to source leak current i gss (q2) v gss =5v << 1 + a drain to source leakage current i dss (q2) v dss =65v << 1ma gate threshold voltage v th (q2) v ds = 10 v, i ds = 1 ma 2.0 2.6 3.2 v transconductance g m(q2) v ds = 28 v, i ds = 100 ma < 0.45 < s drain to source breakdown voltage bv dss (q2) i dss =10 + 5 7 5 6 a < v data sheet pu10542ej03v0ds 3 ne55410gr
rf characteristics (t a =+25 $ c) parameter symbol test conditions min. typ. max. unit 1 q gain 1 db compression output power p o(1db) f = 2 140 mhz, v ds =28v, < 35.4 < dbm drain efficiency d d i dset =20ma < 52 < % g n i a g r a e n i l l note1 5 . 3 1 2 1 < db 2 q gain 1 db compress ion output power p o(1db) f = 2 140 mhz, v ds =28v, < 40.4 < dbm drain efficiency d d i dset = 100 ma < 46 < % g n i a g r a e n i l l note2 1 1 5 . 9 < db gain 1 db compression output power p o(1db) f = 1 840 mhz, v ds =28v, < 40.5 < dbm drain efficiency d d i dset = 100 ma < 49 < % g n i a g r a e n i l l note2 < 14 < db 2 q + 1 q gain 1 db compression output power p o(1db) f = 880 mhz, v ds =28v, < 41.5 < dbm drain efficiency d d i dset = 120 ma (q1 + q2) < 55 < % g n i a g r a e n i l l note3 < 30 < db gain 1 db compression output power p o(1db) f = 2 140 mhz, v ds =28v, < 40.0 < dbm drain efficiency d d i dset = 120 ma (q1 + q2) 34 42 < % p r e w o p t u p t u o out 0 4 9 3 < db g n i a g r a e n i l l note4 5 2 4 2 < db 3rd order intermodulation distortion im 3 < < 40 < dbc drain efficiency d d f = 2 132.5/2 147.5 mhz, v ds =28v, 2 carrier w-cdma 3gpp, test model1, 64dpch, 67% clipping, i dset = 120 ma (q1 + q2), ave p out = 33 dbm < 21 < % notes 1. p in = 15 dbm 2. p in =20dbm 3. p in =5dbm 4. p in =10dbm data sheet pu10542ej03v0ds 4 ne55410gr
typical characteristics (t a =+25 $ c, v ds =28v,i dset = 120 ma, unless otherwise specified) gain g (db) output power p out (dbm) C10 C30 C40 C60 C50 C70 25 15 20 35 40 45 3rd/5th order intermodulation distortion im 3 /im 5 (dbc) 2 tones output power p out (dbm) im 3 /im 5 vs. 2 tones output power im 3 lower upper C20 drain efficiency d (%) d 30 im 5 cw, f = 960 mhz, 1 mhz spacing C20 C35 C45 C60 C55 C70 25 15 20 35 40 45 3rd/5th order intermodulation distortion im 3 /im 5 (dbc) 2 tones output power p out (dbm) im 3 /im 5 , drain efficiency, vs. 2 tones output power im 3 C25 30 im 5 C30 C40 C50 C65 lower upper d d 100 70 50 20 30 0 90 80 60 40 10 drain efficiency d (%) d w-cdma 3gpp, test model 1, 64 dpch, 67% clipping, center frequency 2.14ghz, 15 mhz spacing vs. output power gain, drain efficiency, gain g (db) output power p out (dbm) drain efficiency d (%) d vs. output power gain, drain efficiency, 36 30 32 22 24 26 28 20 20 25 30 35 40 45 g d d 34 80 50 60 10 20 30 40 0 70 f = 840 mhz 860 mhz 880 mhz 900 mhz 920 mhz 30 24 26 16 18 20 22 14 20 25 30 35 40 45 g d d 28 80 50 60 10 20 30 40 0 70 f = 2.09 ghz 2.11 ghz 2.14 ghz 2.17 ghz 2.19 ghz remark the graphs indicate nominal characteristics. data sheet pu10542ej03v0ds 5 ne55410gr
s-parameters s-parameters/noise parameters are provided on our web site in a form (s2p) that enables direct import to a microwave circuit simulator without keyboard input. click here to download s-parameters. [rf and microwave] a [device parameters] url http://www.ncsd.necel.com/microwave/index.html data sheet pu10542ej03v0ds 6 ne55410gr
evaluation circuit (f = 840 to 960 mhz, v ds =28v,i dset =120ma) q1 q2 s s 2 3 4 5 1689111316 (back side) 14 15 s ssssss s ne55410gr 7 10 12 (open) 2.2 nh 18 1 tl8 tl9 tl10 tl11 15 pf 12 pf 9 pf 1 k 1 10 1 6.8 k 1 tl12 tl14 tl15 tl16 tl17 2 pf 6 pf 2 pf tl13 0.22 f + a 47 pf tl18 rfout b a tl4 tl6 tl7 3 pf 47 pf tl5 0.001 f + b 47 f + + v ds (+28 v) 1 k 1 2.2 k 1 6.8 k 1 15 1 tl1 tl2 tl3 0.22 f + 47 pf rfin 0.047 f + 56 nh 4 pf tl19 symbol width (mm) length (mm) symbol width (mm) length (mm) tl1 1.0 3.0 tl11 1.0 3.0 tl2 4.5 10.0 tl12 1.0 5.0 tl3 0.5 16.0 tl13 0.8 48.0 tl4 0.5 5.0 tl14 1.0 6.5 tl5 1.0 48.0 tl15 1.0 10.5 tl6 1.0 4.0 tl16 1.0 9.5 tl7 1.0 3.0 tl17 1.0 10.0 tl8 1.0 6.0 tl18 1.0 6.0 tl9 1.0 3.0 tl19 1.0 3.0 tl10 1.0 4.0 the application circuits and their parameters are for reference only and are not intended for use in actual design-ins. data sheet pu10542ej03v0ds 7 ne55410gr
evaluation circuit (f = 840 to 960 mhz, v ds =28v,i dset =120ma) 6.8 k 1 0.22 f + 1 k 1 (valiable) 2.2 k 1 15 1 47 pf 47 pf 12 pf 3 pf 2.2 nh 18 1 1 k 1 (valiable) 10 1 6.8 k 1 0.047 f + 9 pf 47 pf 2 pf 2 pf 6 pf 0.22 f + 47 f + v gs (q2) , +28 v rf out rf in v ds (q1) , +28 v v ds (q2) , +28 v v gs (q1) , +28 v 55410 4 pf 1.5 pf 15 pf 56 nh 0.001 f + data sheet pu10542ej03v0ds 8 ne55410gr
evaluation circuit (f = 2 090 to 2 190 mhz, v ds =28v,i dset = 120 ma) q1 q2 s s 2 3 4 5 1 6 8 9 11 13 16 (back side) 14 15 ssssssss ne55410gr 7 10 12 12 nh 10 1 tl14 tl12 tl13 0.75 pf 1 pf 1 k 1 10 1 6.8 k 1 tl15 tl17 tl18 tl20 3 pf 1 pf tl16 0.22 f + a 15 pf tl21 rfout b a 0 1 l t 7 l t tl11 1 pf 33 pf tl8 0.22 f + b 22 f + + v ds (+28 v) 1 k 1 10 1 6.8 k 1 tl1 tl2 0.22 f + 47 pf rfin 0.22 f + tl3 tl4 tl5 8.5 pf 2 pf tl6 (open) tl9 tl19 symbol width (mm) length (mm) symbol width (mm) length (mm) tl1 1.0 17.0 tl12 1.0 4.0 tl2 1.0 4.0 tl13 1.0 4.5 tl3 1.0 24.5 tl14 1.0 25.0 tl4 1.0 2.5 tl15 2.5 2.5 tl5 1.0 3.0 tl16 1.0 27.0 tl6 0.5 2.5 tl17 1.0 2.0 tl7 0.5 4.5 tl18 5.0 4.0 tl8 1.0 25.5 tl19 5.0 2.0 tl9 1.0 2.5 tl20 1.0 12.5 tl10 4.5 4.5 tl21 1.0 5.5 tl11 1.0 3.5 the application circuits and their parameters are for reference only and are not intended for use in actual design-ins. data sheet pu10542ej03v0ds 9 ne55410gr
evaluation circuit (f = 2 090 to 2 190 mhz, v ds =28v,i dset = 120 ma) v gs (q2) , +28 v v ds (q1) , +28 v v ds (q2) , +28 v 55410 v gs (q1) , +28 v 0.22 f + 6.8 k 1 rf out rf in 0.5 pf 15 pf 2 pf 33 pf 1.0 pf 0.22 f + 10 1 12 nh 0.75 pf 10 1 1 pf 0.22 f + 6.8 k 1 15 pf 1 pf 3 pf 0.22 f + 22 f + 10 1 1 k 1 (potentiometer) 1 k 1 (potentiometer) data sheet pu10542ej03v0ds 10 ne55410gr
package dimensions 16-pin plast ic htssop (unit: mm) (1.5) 0.90.2 0.200.10 (0.4) (2.7) (0.5) (1.8) (0.1) (2.5) 5.20.2 5.50.3 6.40.3 0.650.1 0.200.10 16 9 1 8 nec 55410 remark ( ): reference value land pattern (unit: mm) 6.40 5.20 0.10 0.50 1.50 4.00 0.48 5.50 1.50 0.20 0.65 0.40 0.20 1.00 1.15 0.28 0.50 0.24 0.24 0.50 0.28 0.28 remarks1. via holes : 158 holes 2. hole size : q 0.15 mm 3. min. spacing : 0.354 mm 4. : solder resist or etching data sheet pu10542ej03v0ds 11 ne55410gr
recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales office. g n i r e d l o s d o h t e m g n i r e d l o s l o b m y s n o i t i d n o c s n o i t i d n o c infrared reflow peak temperature (package surface temperature) : 260 $ c or below s s e l r o s d n o c e s 0 1 : e r u t a r e p m e t k a e p t a e m i t time at temperature of 220 $ c or higher : 60 seconds or less preheating time at 120 to 180 $ 0 2 1 : c ( 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below ir260 wave soldering peak temperature (molten solder temperature) : 260 $ c or below s s e l r o s d n o c e s 0 1 : e r u t a r e p m e t k a e p t a e m i t preheating temperature (package surface temperature) : 120 $ c or below maximum number of flow processes : 1 time maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below ws260 partial heating peak temperature (terminal temperature) : 350 $ c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below hs350 caution do not use different soldering methods together (except for partial heating). data sheet pu10542ej03v0ds 12 ne55410gr
the information in this document is current as of january, 2007. the inform ation is subject to change without notice. for actual des ign-in, refer to the latest publications of nec electronics data sheets or data books, etc., for the most up-to-date specifications of nec electronics products. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec electronics. nec electronics assumes no responsibility for any errors that may appear in this document. nec electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec electronics products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rig hts of nec electronics or ot hers. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. nec electronics assumes no responsibility for any losses incurred by customers or third parties a rising from the use of these circuits, software and information. while nec electronics e ndeavors to enhance the quality, reliability and safety of nec electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (incl uding death) to persons arising from defects in nec electronics products, customers must in corporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. nec electronics products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to nec electronics product s developed based on a customer- designated "quality assurance program" for a specific application. the recommended applications of an nec electronics product depend on its quality grade, as indicated below. cus tomers must check the quality grade of each nec electronics product before using it in a particular application. the quality grade of nec electronics products is "standard" unless otherwise expressly specified in nec electronics data sheets or data books, etc. if customers wish to use nec electronics products in applications not intended by nec electronics, they must contact an nec electronics sales representative in advance to determine nec electronics' willingness to support a given application. (note) % % % % % % m8e 02. 11-1 (1) (2) "nec electronics" as used in this statement means nec electronics corporation and also includes its majority-owned subsidiaries. "nec electronics products" means any product developed or manufactured by or for nec electronics (as defined above). computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "standard": "special": "specific": ne55410gr
4590 p a t r ick he n r y drive sa n t a c l ara , c a 950 5 4 - 18 1 7 telep h o n e : ( 408 ) 919 - 2 5 0 0 facsi m ile : ( 40 8 ) 988 - 02 7 9 subject : compliance with eu dir e ctive s cel certifies, to its kn o w ledge, that semicond u ctor and laser products detailed below are compliant with the requirements of european union (eu) directive 2002/95/ec restriction o n use of hazardous substance s in electrical and electro n ic equipmen t (rohs) a n d the requi r e ments of eu directive 2003/11/ec restriction o n penta and octa bde. cel pb-fre e products h a ve the sam e base part n u mber with a suffix added. the suffix ?a indicates that the device is pb-fr e e. the ?az suffix is us e d to design a te devices containing p b which are exempted from the requirement of r o hs directive (*). in all cases the d e vices have pb-free terminals. all devices with these suffixes meet the requir e ments of the rohs directive. this stat u s is based on cel?s understanding of t he eu directives and k n owledge of the materials that go into its p r oducts as o f the date of discl o s ure o f this infor m ation . r e s t ric t e d s u bs t a n c e per rohs con c e n tratio n limit per rohs (value s are n o t yet fixed) con c e n t ra t io n con t ai ned in cel devices - a - a z lead ( p b ) < 10 0 0 ppm no t de t e c t ed (*) mercury < 100 0 ppm not dete cted cadmi u m < 100 ppm not dete cted hexavale nt chromi um < 100 0 ppm not dete cted pbb < 1000 ppm not detec t ed pbde < 1000 ppm not detec t ed if you should have any additional q uestions re g a rding our d e vices and compliance t o environm e n ta l standards, p l ease do no t hesitate to contact your local representative. i mpor t an t i nf o rm a t ion and disclaimer : i n f or m atio n provided b y ce l on its w ebsite or i n other commun i cations concerti n g the sub s tanc e content of its pr o ducts represents kno w ledg e and b e lief as of t he date that it is provided. cel bases its kno w ledge a n d belief on in f o rm a t ion p r o v ided b y t h i r d pa rt ie s and m a k e s no r ep r e s en t a t ion o r w a rr an t y a s t o t he a cc u r ac y o f s u c h in f o rm a t ion . eff o rts a r e u nder w a y to b e tte r in t eg r a t e in f o rm a t ion fr o m t hi r d pa rt ie s. c e l ha s t a k en and c ont inu e s to take reason a ble steps t o p r o v ide r epr e s en t a t i v e and ac cu r a t e information but m a y not h a ve conducted destructive testing or c hemi c al anal y s is on in c oming m a terials and chemicals. cel and c e l s upplie rs c on s id e r c e rt ain in f o r m a t ion t o be p r o p r i e t ar y , and thus c as numbers an d other limited information m a y not be availa b le for release . in no event shall cel?s liabilit y ar i s ing out of such information e x ce e d the total purc h ase price of the cel par t ( s) at issue s old by c e l t o customer on an annual basis. see cel t e rms and conditions f o r additional c l arification of w a rra n t ies and liabilit y .

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